Electrically-pumped si-laser using nano-particle-modified metal-oxide-Si structures
Resource
Industrial Electronics Society, 2005. IECON 2005. 32nd Annual Conference of IEEE
Journal
IECON
Journal Volume
2005
Pages
2381-2385
Date Issued
2005
Author(s)
Abstract
Measurement on the carrier lifetime shows that the radiative-recombination rate in Si can be enhanced to be more than twice of the non-radiative-recombination rate at large injection current using the nano-particle modified metal-oxide-silicon (MOS) structure. With the enhanced radiative recombination, the device with such a MOS structure exhibits lasing behaviours under forward bias of current injection at room-temperature and cw operation. The laser has the threshold current of 56 mA. The lasing wavelength well corresponds to the Si indirect-bandgap energy.
SDGs
Type
conference paper
File(s)![Thumbnail Image]()
Loading...
Name
01569277.pdf
Size
416.26 KB
Format
Adobe PDF
Checksum
(MD5):90f92f69dec7b4798a3fa1d769f48e0b