Study and Fabrication of Silicon-base Erbium-doped Light-emitting Devise with Nanoparticles and Nanostructures
Date Issued
2007
Date
2007
Author(s)
Wang, Wei-Kai
DOI
zh-TW
Abstract
While using a lot of the Engineering and optical communication, nanotechnology has offered a lot of chances and solved the problem that a large amount of transmitted information .With the popular research of nanotechnology and demand for the optical communication , a new manufacturing approach of the silicon-base optical communication device made by nanoparticles is put forward in this thesis. This kind of device manufacturing method is to fabricate the light-emitting layer in mixing nanoparticles and Spin-on Glass (SOG) first, and then utilize the way of the spin coating to deposit on the silicon base plate. The reason of using silicon is because the silicon is acting the part of leader on the integrated circuit industry now.
The wavelength emitted by light-emitting layer is 1530nm, it is very important wave band in the optical communication system. The main composition of light-emitting layer is erbium ion and host material. The source of the erbium ion is erbium oxide (Er2O3) nanoparticle. Host material is Spin-On glass that has widely used in semiconductor manufacturing process. We also use other nanoparticles including P2O5, Al, Si, Yb2O3, Y2O3 and Al2O3 to endure the mixing commonly for modifying its physical characteristic and improving the light-emitting efficiency. These influence mixed together will be studied too, and will study the influence of light-emitting behavior in mixture of different kinds of nanoparticle. For erbium ion in light-emitting layer with light activated process and other chemical reaction, it is necessary to anneal the devise with high temperature in fabrication process. We achieve this goal by heating devise in the high-temperature furnace is heated. We fabricate the multi-layer luminescence device in nanostructures too, and study the influence of light-emitting behavior in all kinds of multi-layer nanostructures. We use the E-gun evaporation method to evaporate a noble metal thin film on the device, and utilize this thin film to strengthen the luminescence efficiency of the erbium ion. In addition, we use different kinds of material analysis method to analyses the physics mechanism of luminescence efficiency of erbium ion strengthened by noble metal thin film.
To compare with other kinds of fabrication technology, like ion implantation and solid-state epitaxy, our of manufacturing technology is simple and low cost of. And can combine with the present integrated circuit manufacturing technology, extraordinary to the combination of the photonic and electronic industry in the future. Helpful, worth doing the further discussion and potentiality with development
Subjects
nanoparticle
erbium
Spin-On glass
high-temperature annealing
silicon-base device
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-96-R94941084-1.pdf
Size
23.31 KB
Format
Adobe PDF
Checksum
(MD5):abd93be7df7c76fb2f0cb4f2215fc4ce