Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing

Journal

Applied Surface Science

Journal Volume

254

Journal Issue

19

Pages

6076-6080

Date Issued

2008

Author(s)

Chen, P.S.

Lee, S.W.

Lee, M.H.

DOI

10.1016/j.apsusc.2008.02.180

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-45049084363&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/341155

Type

journal article