Enhanced Si quantum dot luminescence in Si-rich SiC thin-film light emitting diode
Journal
Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012
Pages
839-840
Date Issued
2012
Author(s)
Abstract
A Si quantum dot enhanced electroluminescence at 580 nm from the Si-rich Si x C 1-x p-i-n LED grown by PECVD at silane-rich condition is demonstrated with a power-current slope of 0.2 μW/A at bias of 8.8 V.
SDGs
Type
conference paper