Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices

Resource

Solid-State Electronics 50 (2): 109-113

Journal

Solid-State Electronics

Journal Volume

50

Journal Issue

2

Pages

109-113

Date Issued

2006

Date

2006

Author(s)

Wei, J.-Y.

Maikap, S.

Lee, M.H.

Lee, C.C.

Liu, C.W.

URI

Type

journal article

File(s)

Name

63.pdf

Size

137.16 KB

Format

Adobe PDF

Checksum

(MD5):22d7d2c8da365f9e1fe0716e41a15f66