An analysis of small-signal gate-drain resistance effect on RF power MOSFETs

Journal

IEEE Transactions on Electron Devices

Journal Volume

50

Journal Issue

2

Pages

525-528

Date Issued

2003

Author(s)

DOI

10.1109/TED.2002.808516

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0038394648&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/303337

Type

journal article