On the optimized nucleation of near-single-crystal CVD diamond film
Journal
Materials Research Society Symposium - Proceedings
Journal Volume
416
Pages
81-87
Date Issued
1996
Author(s)
Abstract
Near-single-crystal diamond films have been obtained in a number of laboratories recently. The optimization of nucleation density by using a bias-enhanced nucleation (BEN) method is believed to be a critical step. However, the condition of optimized nucleation has never been clearly delineated. In the present report, a novel quantitative technique was established to monitor the nucleation of diamond in-situ. Specifically, the induced current was measured as a function of nucleation time during BEN. The time-dependence of induced current was studied under various methane concentrations as well as substrate temperatures. The optimized nucleation condition can be unambiguously determined from the current-time plot. Besides the in-situ current probe, ex-situ x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were also used to investigate the chemical and morphological evolution. Characteristic XPS and AFM features of optimized nucleation is discussed.
Other Subjects
Atomic force microscopy;Chemical vapor deposition;Induced currents;Methane;Morphology;Nucleation;Optimization;Single crystals;Substrates;Temperature;X ray photoelectron spectroscopy;Bias enhanced nucleation;Current time plot;Nucleation density;Diamond films
Type
conference paper