Graphene quantum Hall effect parallel resistance arrays
Journal
Physical Review B
Journal Volume
103
Journal Issue
7
Date Issued
2021
Author(s)
Panna A.R
Hu I.-F
Kruskopf M
Patel D.K
Jarrett D.G
Liu C.-I
Payagala S.U
Saha D
Rigosi A.F
Newell D.B
Elmquist R.E.
Abstract
As first recognized in 2010, epitaxial graphene on SiC(0001) provides a platform for quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures and materials. Here we report graphene parallel QHR arrays, with metrologically precise quantization near 1000ω. These arrays have tunable carrier densities, due to uniform epitaxial growth and chemical functionalization, allowing quantization at the robust ν=2 filling factor in array devices at relative precision better than 10-8. Broad tunability of the carrier density also enables investigation of the ν=6 plateau. Optimized networks of QHR devices described in this work suppress Ohmic contact resistance error using branched contacts and avoid crossover leakage with interconnections that are superconducting for quantizing magnetic fields up to 13.5 T. Our work enables more direct scaling of resistance for quantized values in arrays of arbitrary network geometry. ? 2021 authors. Published by the American Physical Society.
Subjects
Electric resistance measurement; Graphene; Magnetic leakage; Ohmic contacts; Silicon carbide; Superconducting devices; Arbitrary networks; Chemical functionalization; Crossover leakages; Epitaxial graphene; Parallel resistance; Quantized Hall resistance; Quantizing magnetic field; Two-dimensional structures; Quantum Hall effect
Type
journal article