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  4. In-Bi-Sn低熔點合金熱界面材料之熱性、微結構與界面反應研究
 
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In-Bi-Sn低熔點合金熱界面材料之熱性、微結構與界面反應研究

Thermal Property、Microstructure and Interfacial Reactions of In-Bi-Sn Low-Melting Point Thermal Interfacial Alloys

Date Issued
2007
Date
2007
Author(s)
Lin, Shih-Yen
DOI
zh-TW
URI
http://ntur.lib.ntu.edu.tw//handle/246246/55378
Abstract
As the developing of electronic industry and consuming electronic products proceeding toward high performance、high power and low power dissipation, the demand of the heat dissipation of IC component have been promoted. The heat dissipation of conventional thermal interface materials is challenged by the increasing demand for higher frequency and higher power. Therefore, this study adopts Low-melting point alloy In-32.5Bi-16.5Sn as thermal interface material, and tries to make use of the high thermal conductivity of metal to deduce the thermal budget at the interface between ship and intergraded heat spreader. This investigation includes the interfacial reaction between In-32.5Bi-16.5Sn alloy and metal substrates, calculating the kinetic of intermetallic compounds and dissolution rates of different substrates. Metallic substrates are chosen for real condition: Cu substrate processes high thermal conductivity, Ni-electroplated layer uses as a diffusion barrier, Au usually uses as an oxidation protective player or a wetting layer. Finally, according to the high conductivity of Cu substrate, the thermal resistance of Cu/In-32.5Bi16.5Sn/Cu is measured. The results show that the intermetallic compound formed at the interface of In-32.5Bi-16.5Sn/Cu is Cu6(In, Sn)5. The growth of Cu6(In, Sn)5 compound is diffusion-controlled, and the activation energy for the growth of Cu6(In, Sn)5 compound is calculated to be 2.86 kJ/mole. The intermetallic compound formed at the interface of In-32.5Bi-16.5Sn/Ni is Ni3(Sn, In)4, and the growth of Ni3(Sn, In)4 compound is diffusion-controlled. The activation energy of Ni3(Sn, In)4 intermetallic compound is calculated to be 52.15 kJ/mole. The intermetallic compound formed at the interface In-32.5Bi-16.5Sn/Au could be divided by temperature: (1) AuIn2、AuIn intermetallics are formed respectively at 80℃(2) AuIn2、AuIn、Au7In3 intermetallics are observed respectively above 100℃. The growths of AuIn2 and Au7In3 compounds are diffusion-controlled, and the activation energies for AuIn2 and Au7In3 compounds are calculated to be 37.64 kJ/mole and 79.69 kJ/mole, respectively。In addition, the maximum consuming thickness of Ni-electroplated layer is about 3~4 μm, which is one fifth of the maximum consuming thickness of Cu substrate. The thermal impedance of Cu/In-32.5Bi-16.5Sn/Cu at 100W has similar increasing trend with the growth of Cu6(In, Sn)5 compound.
Subjects
低熔點合金
熱界面材料
熱阻抗
Low melting point alloy
Thermal interfacial material
Thermal impedance
Type
thesis
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ntu-96-R94527024-1.pdf

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