Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers
Journal
Journal of Physics and Chemistry of Solids
Journal Volume
66
Journal Issue
11
Pages
2082-2085
Date Issued
2005-11
Author(s)
Abstract
Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=Eg(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field. © 2005 Elsevier Ltd. All rights reserved.
Subjects
A. Quantum wells; A. Semiconductors; D. Optical properties
Other Subjects
Mathematical models; Optical properties; Phase transitions; Semiconducting indium compounds; Semiconductor materials; A. quantum wells; A. semiconductors; D. optical properties; Semiconductor quantum wells
Type
journal article