The Luminescence effect of Multi-layer Ge nanocrystal in MOS
Date Issued
2007
Date
2007
Author(s)
Fan, Huang-Yu
DOI
zh-TW
Abstract
The advantage of the optoelectronic component of silicon germanium is fully compatible with the Si-based microelectronic chips. Because SiGe-based optoelectronic devices can be tailored from 1.3 to 1.55 um, it increases the importance of this material system to fiber communication applications. With the ripe process technology of the several key devices like SiGe-based light emitters, photodetectors, modulators, and waveguides, it also opens the door for Si-based optical and electronic integrated circuits (OEICs).
In this thesis we first fabricated a device which has the basic MOS structure and we embedded Ge nanocrystal in the oxide. This thesis point is that we fabricated different number of layer Ge nanocrystal and change post oxidation anneal time. Then we measure it. We try increasing the number of layer to increase the probability of Ge capture electron. Increase post oxidation anneal time to get whether Ge nanocrystal can form more like sphere independently.Finally, We measure our sample when we decreasing the temperature.Change these three factors and see the effect of EL
Subjects
矽鍺元件
OEIC(光電積體電路)
鍺奈米粒子
EL
POA
SiGe device
OEIC
Ge nanocrystal
PO
Type
thesis
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