Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
Resource
Applied Physics Letters 80 (23): 4375-4377
Journal
Applied Physics Letters
Journal Volume
80
Journal Issue
23
Pages
4375-4377
Date Issued
2002
Author(s)
Abstract
Based on wavelength-dependent and temperature-varying time-resolved photoluminescence (PL) measurements, the mechanism of carrier transport among different levels of localized states (spatially distributed) in an InGaN/GaN quantum well structure was proposed for interpreting the early-stage fast decay, delayed slow rise, and extended slow decay of PL intensity. The process of carrier transport was enhanced with a certain amount of thermal energy for overcoming potential barriers between spatially distributed potential minimums. With carrier supply in the carrier transport process, the extended PL decay time at wavelengths corresponding to deeply localized states can be as large as 80 ns.
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journal article
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