Light emission polarization properties of strained (1122) semipolar InGaN quantum well
Journal
Physica Status Solidi (C) Current Topics in Solid State Physics
Journal Volume
7
Journal Issue
44750
Pages
1859-1862
Date Issued
2010
Author(s)
Huang H.-H
Abstract
We studied the optical characteristics of a (1122) semipolar InGaN/GaN quantum well with different indium compositions, quantum well widths, and injection carrier densities. The self-consistent Poisson and 6x6 k • p Schrödinger solver has been applied to study the band structure in semipolar InGaN quantum well light emitting diodes. Our work shows an interesting switching behavior of the polarization direction when the indium composition is larger than 40%. The best configuration for themaximized polarization condition has been studied in this paper. (Figure Presented) (a) A schematic of the semipolar plane (1122); (b) the configuration of the rotating coordinate system from (x, y, z) to (x', y', z'), and (c), (d) are the schematic illustrations of rotating the GaN crystal structure with θ and φ, respectively. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
Subjects
InGaN; LEDs; Optical properties; Polarization; Quantum wells; Strain
SDGs
Other Subjects
InGaN; InGaN quantum wells; InGaN/GaN quantum well; Injection carriers; LEDs; Optical characteristics; Polarization conditions; Polarization direction; Polarization properties; Quantum well; Rotating coordinate system; Semipolar; Switching behaviors; Crystal structure; Gallium nitride; Indium; Light emission; Light emitting diodes; Optical properties; Polarization; Rotation; Semiconductor quantum wells
Type
conference paper