A 4K–400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer
Journal
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Journal Volume
53
Start Page
379
End Page
380
ISSN
07431562
ISBN (of the container)
978-166549772-5
Date Issued
2022-06-12
Author(s)
Ming-Chun Hong
Yao-Jen Chang
Yu-Chen Hsin
Liang-Ming Liu
Yi-Hui Su
Guan-Long Chen
Shan-Yi Yang
I-Jung Wang
SK Ziaur Rahaman
Hsin-Han Lee
Shih-Ching Chiu
Chen-Yi Shih
Chih-Yao Wang
Fang-Ming Chen
Jeng-Hua Wei
Shyh-Shyuan Sheu
Wei-Chung Lo
Tuo-Hung Hou
Abstract
A universal MRAM technology is proposed to fulfill versatile applications ranging from quantum computing to automotive electronics across a wide operating temperature range of 4K to 400K. An ultrathin (1.4 nm) CoFeB composite free layer with an Mg spacer is designed to enlarge breakdown voltage and write margin, decrease switching current, and maintain thermal stability and magnetoresistance ratio at all temperatures. High endurance (>1011) and excellent reliability (write margin > 0.4 V) are achieved from 4K to 400K without compromising speed (10 ns) and retention (10 years at 300K).
Publisher
IEEE
Type
conference paper