Site-controlled crystalline growth of InN on GaN substrate and its photoluminscence
Journal
2016 Conference on Lasers and Electro-Optics, CLEO 2016
Date Issued
2016
Author(s)
Abstract
We report a site-controlled growth of InN on a GaN substrate. Crystalline InN micropillars were selectively grown from the hexagonal V-pits on GaN surface. The grown mechanism and photoluminescent property will be discussed. © 2016 OSA.
Other Subjects
Chromium compounds; Crystalline materials; Gallium nitride; III-V semiconductors; Indium compounds; Controlled growth; Crystalline growth; GaN substrate; Gan surfaces; Micro-pillars; Photo-luminescent properties; Vanadium compounds
Type
conference paper