Studies of Indium Oxide Thin Film Transistors
Date Issued
2008
Date
2008
Author(s)
Yang, Chao-Shun
Abstract
Recently, oxide semiconductors have gained much attention in the academia and the industry. Oxide semiconductors usually are of transparency owing to their wide band-gap characteristics and can be used in transparent electronics. Applications concerned have been developed in the market gradually. In addition, oxidesemiconductor-based thin film transistors can be fabricated on flexible substrates. Its flexibility can be used in a lot of novel consumer electronics and displays like LC displays、OLED displays and e-Paper etc. Oxide semiconductors have special electronic configuration of (n-1)d10ns0 (n≧4).Because of the symmetric s orbital, oxide semiconductor can attain high mobility in both crystalline and amorphous structures. Actually, oxide semiconductor thin films can be grown with good quality on a wide variety of substrates at low temperatures. In this thesis, the oxide semiconductor material studied is indium oxide. Indium oxide is used as the active material of TFTs in this thesis. In general, indium oxidehin films are very conductive, and thus many laboratories over the world have much difficulty in making indium oxide TFTs with low enough off currents and proper on/off current ratios. In the thesis, unique method is introduced to reduce the off currents dramatically. By using the unique method, the on/off ratios of our indium oxide TFTs are over 1000 times higher than results of other groups.
Subjects
Indium oxide
TFT
Type
thesis
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