High-Frequency Graphene Base Hot-Electron Transistor
Journal
ACS Nano
Journal Volume
15
Journal Issue
4
Pages
6756-6764
Date Issued
2021
Author(s)
Liang B.-W
Chang W.-H
Lin H.-Y
Chen P.-C
Zhang Y.-T
Simbulan K.B
Li K.-S
Chen J.-H
Kuan C.-H
Lan Y.-W.
CHIEH-HSIUNG KUAN
Abstract
The integration of graphene and other two-dimensional (2D) materials with existing silicon semiconductor technology is highly desirable. This is due to the diverse advantages and potential applications brought about by the consequent miniaturization of the resulting electronic devices. Nevertheless, such devices that can operate at very high frequencies for high-speed applications are eminently preferred. In this work, we demonstrate a vertical graphene base hot-electron transistor that performs in the radio frequency regime. Our device exhibits a relatively high current density (μ200 A/cm2), high common base current gain (α? ?99.2%), and moderate common emitter current gain (β? ?2.7) at room temperature with an intrinsic current gain cutoff frequency of around 65 GHz. Furthermore, cutoff frequency can be tuned from 54 to 65 GHz by varying the collector-base bias. We anticipate that this proposed transistor design, built by the integrated 2D material and silicon semiconductor technology, can be a potential candidate to realize extra fast radio frequency tunneling hot-carrier electronics. ? 2021 American Chemical Society.
Subjects
Capacitance measurement; Cutoff frequency; Graphene transistors; Hot electrons; Radio waves; Semiconducting silicon; Semiconductor device manufacture; Transistors; Common-emitter current gain; Current gain cutoff frequency; High current densities; High-speed applications; Hot electron transistors; Silicon semiconductor technology; Two Dimensional (2 D); Very high frequency; Graphene
SDGs
Type
journal article