A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital Circuits
Journal
IEEE Transactions on Nuclear Science
Journal Volume
39
Journal Issue
2
Pages
272-277
Date Issued
1992
Author(s)
Abstract
A design consideration for digital CMOS circuits that are almost insensitive to radiation is proposed. By adding three n-MOSFETs to the conventional digital CMOS circuits, good radiation-hard behavior is observed in the inverter, NOR, and NAND gates under SPICE simulation. Detailed circuit design consideration and the simulation results are given.>
Type
journal article