Metal-oxide-semiconductor light-emitting diodes at Si bandgap energy
Resource
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Journal
Conference on Lasers and Electro-Optics Europe
Pages
-
Date Issued
Sep-00
Date
Sep-00
Author(s)
DOI
N/A
Abstract
Summary form only given. We report a simple way of electroluminescence from Si. The structure is the same as the conventional metal-oxide-semiconductor (MOS) structure. The oxide is very thin so that carriers could tunnel through the oxide and make the device behave like a diode. Under forward bias, the MOS structure emit light at bandgap energy of Si. Increasing applied voltages, the emission at Si bandgap energy gradually vanishes and, meanwhile, shifts to wavelengths longer than 1200 nm. We shows a spectrum measure from MOS on n-type Si. The MOS structures made on both n-type and p-type Si have similar light-emitting behaviors. The simplicity of emitting light from both p-type and n-type silicon should make silicon an extremely powerful material for applications in optics.
SDGs
Type
conference paper
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