Temperature dependence of the direct band gap of Si-containing carbon nitride crystalline films
Journal
Physical Review B - Condensed Matter and Materials Physics
Journal Volume
56
Journal Issue
11
Pages
6498-6501
Date Issued
1997
Author(s)
Abstract
We have measured the temperature dependence of the spectral features in the vicinity of the direct gap ${E}_{g}^{d}$ of Si-containing carbon nitride polycrystalline films in the temperature range between 20 and 500 K using piezoreflectance (PzR). From a detailed line-shape fit to the PzR spectra, the ${E}_{g}^{d}$ and the broadening parameter of direct band-to-band transitions at various temperatures are determined. The temperature dependence of ${E}_{g}^{d}$ are analyzed by the Varshni equation [Physica 34, 149 (1967)] and an empirical expression proposed by O'Donnel and Chen [Appl. Phys. Lett. 58, 2924 (1991)]. The parameters that describe the temperature dependence of the energy gap of the material are evaluated and discussed. The broadening parameter is found to be insensitive to the temperature variation.
SDGs
Type
journal article