三五族半導體光電材料及元件之研究(I)
Date Issued
1999-07-31
Date
1999-07-31
Author(s)
DOI
882215E002017
Abstract
The studies of this project include the
growths of (1) low nitrogen content InAsN
quantum well and (2) InGaAs quantum dot.
For the growth of InAsN SQW on InP
substrates, GSMBE using RF plasma
nitrogen source was used. X ray diffraction
shows that QW strain can be reduced by
introducing nitrogen slightly, smoother
hetrojunctions were also observed. However,
crystal structures of samples with larger
nitrogen contents become worse due to more
serious local strain. The PL emission peak
energy decreases with increasing nitrogen
contents. The maximum nitrogen mole
fraction in this study is 5.9 %, along with a
10K PL peak position at ~2.6 mm in
wavelength. To the best of our knowledge,
this is the longest emission wavelength of
the inter-band transition grown on InP
substrates to date. For InGaAs quantum dot,
migration enhanced technology was used.
The PL FWHM’s of the InGaAs QD’s are
almost temperature independent. Their
ground state FWHM’s are all below 30 meV,
and reveal very good uniformity.
Publisher
臺北市：國立臺灣大學電機工程學系暨研究所
Type
report
File(s)![Thumbnail Image]()
Loading...
Name
882215E002017.pdf
Size
65.45 KB
Format
Adobe PDF
Checksum
(MD5):3d69e2a03dd9ca88c7b04e75023ac457