A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

Journal
Organic Electronics
Journal Volume
31
Pages
227-233
Date Issued
2016
Author(s)
Fang, X.
Lin, C.-H.
Sun, Y.-T.
Chin, H.-T.
Zan, H.-W.
Meng, H.-F.
Horng, S.-F.
DOI
URI
URL
Abstract
A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10-5 mA/cm2 and high ON/OFF current ratio as high as 105.
SDGs

[SDGs]SDG7

Type
journal article

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