Fabrication and analysis of MEMS-based gated field emission electron beam emitters
Date Issued
2010
Date
2010
Author(s)
Yu, Yung-Han
Abstract
This thesis presents MEMS processes to fabricate cold field emission arrays (CFEA) which are capable of working at low voltages in multiple electron-beam lithography.
The CFEA consists of three main parts: cathode, gate and anode. The cathode has a silicon needle array which has small radius tip used to emit current. The gate is used to enhance the electric field near the silicon needle, and the anode is used to collect the electrons emitted from the cathode.
The process consists in using e-beam lithography to define the shape of the gate which is then obtained by wet-etching. By using KOH etching and reactive ion etching (RIE), the silicon needles are achieved. Focused ion beam etching can be also used in CFEA’s fabrication. However, this kind of etching technology damages the structure of the silicon needles due to material sputtering and, as a consequence, the CFEA cannot emit electrons.
Finally, when the process is completed, the field emission experiments are proceeded at high vacuum ( ) environmental conditions. The CFEA’s properties can be observed from using the field emission theory to analyze the measured values of the emission current.
The experimental results are as follows: effective emission area , electric field enhancement factor , turn-on electric field , field emission current can achieve to per tip when the supplied voltage is for the anode and for the cathode.
Subjects
field emission
field emission array
e-beam lithography
focused ion beam
Type
thesis
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