Interrelation Between the Magnetocapacitance, Tunneling Magetoresistance, and Interfacial Density of States
Date Issued
2007
Date
2007
Author(s)
Chen, Jen-Ru
DOI
en-US
Abstract
The magnetocapacitance (TMC) of typical magnetic tunnel junctions (MTJs) has been measured, and the TMC diagram has an inverse appearance comparing to the tunneling magnetoresistance (TMR). We described the theorectical model of the effective capacitances from the spin-dependent chemical potential change which due to the charge density gradient at the interfaces. In the observed result, the TMC is consistent well with the theoretical model that we can derive a relation between the TMC, TMR and the interfacial density of states (IDOS). According to Julliére model and the actual parameters, the IDOS of the ferromagnetic electrode was estimated approximately the value near the realistic one of bulk. Futher more, the bias dependence and temperature dependence measurements of the TMR and TMC were carried out and related to the theoretical model exploring the behaviors of IDOS. We found that the IDOS is declining slowly with the increasing bias and corresponds to the other researches about it. However, the temperature-dependent expressed no reasonable IDOS variation because of no temperature-dependent considerations being joined in theoretical deductions.
Subjects
穿隧磁電阻
磁電容
介面
狀態密度
Tunneling magnetoresistance
magnetic tunnel junction
magnetocapacitance
interfacial density of states
Type
thesis
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