Ferroelectric Al:HfO2 Negative Capacitance FETs
Journal
International Electron Devices Meeting
Date Issued
2017
Author(s)
M. H. Lee
P.-G. Chen
S.-T. Fan
Y.-C. Chou
C.-Y. Kuo
C.-H. Tang
H.-H.Chen
S.-S. Gu
R.-C. Hong
Z.-Y. Wang
S.-Y. Chen
C.-Y. Liao
K.-T. Chen
S.T. Chang
K.-S. Li
C. W. Liu
Description
San Francisco
Type
conference proceedings
