Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy
Resource
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Journal
IEEE International Conference On Indium Phosphide and Related Materials, 2001.
Pages
555-558
Date Issued
2022 May-01
Date
May-01
Author(s)
DOI
N/A
Abstract
The growth of InAsN alloys with various nitrogen contents on [100] InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed.
SDGs
Type
conference paper
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