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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Transient Behavior of 40nm PD SOI NMOS Device Considering STI-Induced Mechanical Stress Effects
Details
Transient Behavior of 40nm PD SOI NMOS Device Considering STI-Induced Mechanical Stress Effects
Journal
IEDMS
Date Issued
2008-11
Author(s)
J. S. Su
J. B. Kuo
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/342566
Type
conference paper