RF Amplifiers with Active Inductors or Balun
Date Issued
2012
Date
2012
Author(s)
Yui, Chau-Chan
Abstract
An ultra-wideband low-noise amplifier with active inductor is designed and implemented in
a TSMC 0.18μm CMOS technology. This active inductor consists of a cascode FET with a
feedback resistor, and operates at a high self-resonance frequency. The common-drain FET
in the feedback loop enhanced the Q factor of the inductor. The core chip size is only 840
μm × 610 μm. The simulated power gain is 13.68 dB, with the 3-dB bandwidth of 3.1-10.3
GHz. Both the input and ouptut reflection coefficients are less than −10 dB over the entire
band. The power consumption, without an output buffer, at 1.8-V supply is 14.016 mW.
A differential low-noise amplifier at 5 GHz is designed and implemented in a TSMC
0.18μm CMOS technology. The chip size is reduced by using a pair of differential active
inductors with enhanced Q factor and high resonant frequency. The core chip area of this
LNA is 0.45 mm2, the simulated power gain is 12.5 dB, the noise figure is 2.7 dB. Both
the input and ouptut reflection coefficients are below −10 dB over the entire band, and the
power consumption is 14.2 mW.
A CMOS single-ended power amplifier with an active input balun is designed and implei
mented in a TSMC 0.18μm CMOS technology, which can be implemented in a smaller chip
compared with conventional balanced or differential power amplifiers with a passive output
balun or off-chip transformer. The proposed power amplifier is fabricated using a TSMC
0.18 μm CMOS process. Its chip size is 0.85 μm × 0.65 μm, the output P1dB is 13.1 dBm,
its gain is 26.25 dB, and its PAE of 27.9 %.
Subjects
active inductor
active balun
LNA
PA
UWB
Type
thesis
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