Design and Fabrication of Novel Darlington Transistor Using Light-Emitting Transistors for Smart Thermal Sensor Technology
Journal
IEEE Electron Device Letters
Journal Volume
45
Journal Issue
7
Start Page
1365-1368
ISSN
0741-3106
1558-0563
Date Issued
2024-07
Author(s)
Abstract
In this letter, we introduce a groundbreaking thermal current gain enhancement approach through a first-of-its-kind Darlington pair circuit employing three-port high-speed Light-Emitting Transistors (LETs). The circuit, meticulously designed with two LETs, was thoroughly investigated for temperature-dependent current gain across substrate temperatures ranging from 25 C to 85 C. Operating at V_bf CE of 4 V and I_bf B of 1 mA, we observed a remarkable 153% increase in LET current gain from 25 C to 85 C. Notably, the Darlington transistor exhibited an even more substantial surge, achieving a 210% increase in current gain under same bias and temperature conditions. Furthermore, at V_bf CE of 4 V and I_bf B of 1 mA, the collector current-to-temperature signal ratio (Δ I_bf C/Δ T ) measured at 26.2μ A/°C, accompanied by a voltage-to-temperature signal (Δ V_bf ou t/Δ T ) of 9.12 mV/°C. These outstanding achievements position the Darlington transistor as a promising candidate for the front-end design of smart thermal sensors, surpassing conventional bipolar-based temperature sensors.
SDGs
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Type
journal article