A low phase noise 52-GHz push-push VCO in 0.18-/spl mu/m bulk CMOS technologies
Resource
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Journal
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Pages
-
Date Issued
2005-06
Date
2005-06
Author(s)
Cho, Yi-Hsien
Tsai, Ming-Da
Chang, Hong-Yeh
Chang, Chia-Chi
Wang, Huei
DOI
1529-2517
Abstract
A V-band fully integrated complementary push-push VCO is first presented in 0.18- /spl mu/m bulk CMOS technologies. Thin-film microstrip (TFMS) lines are utilized in the circuit to reduce the conductive substrate effect. In order to lower the phase noise, complementary cross-coupled pairs are used to generate negative conductance. The measured phase noise at 1-MHz offset is about -97 dBc/Hz at 52.6 GHz and is -104 dBc/Hz at 26.3 GHz. To the authors' best knowledge, this complementary CMOS VCO achieves the lowest phase noise in comparison with other VCOs using standard bulk CMOS processes in V-band.
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Type
journal article
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