Influence of architecture-controlled GaN Rod arrays on the output power of GaN LEDs
Journal
IEEE Photonics Technology Letters
Journal Volume
22
Journal Issue
24
Pages
1847-1849
Date Issued
2010
Author(s)
Abstract
We report the influence of controlled lengths and densities of GaN rod arrays on the output power of GaN light-emitting diodes (LEDs). The morphology-controlled GaN rod arrays are fabricated via using ZnO rod arrays as a dry etching mask. Our investigation indicates that the output power of GaN LEDs has a strong dependence on the lengths and densities of GaN rod arrays. The variation of output power of GaN LEDs with GaN rod arrays is caused by the Fabry-Pérot resonance of the film composed by GaN rod arrays. The theoretical analysis also shows a good agreement with the measurement results.
SDGs
Type
journal article