Application of insulated gate bipolar transistor to zero-current switching converters
Journal
IEEE Transactions on Power Electronics
Journal Volume
4
Journal Issue
1
Pages
2-7
Date Issued
1989-01
Author(s)
Abstract
The problems associated with insulated-gate bipolar transistor (IGBT) devices in PWM converters, such as turn-off current tailing and turn-off latching, are largely avoided in zero-current switching resonant converters. Phenomena induced by dv/dt, such as the power losses and latching, are identified as the predominant problems in using IGBT devices for very-high-frequency resonant operations. The discussion and the verification of the results presented are focused on buck-type converters in the zero-current switching family.
SDGs
Type
journal article