Novel structure in Ge/Si epilayers grown at low temperature
Journal
Thin Solid Films
Journal Volume
369
Journal Issue
1
Pages
182-184
Date Issued
2000
Author(s)
CHIEH-HSIUNG KUAN
Cheng, H.H.
Chia, C.T.
Markov, V.A.
Guo, X.J.
Chen, C.C.
Peng, Y.H.
CHIEH-HSIUNG KUAN
Abstract
We report the growth of Ge/Si strained layer at low temperature. A new growth mode is observed where `groove islands' are formed beneath the Ge wetting layer. The new structure exhibits an Ge concentration dependent profile along the growth direction. This effect is tentatively attributed to the stress-driven intermixing of Ge/Si during the growth.
We report the growth of Ge/Si strained layer at low temperature. A new growth mode is observed where `groove islands' are formed beneath the Ge wetting layer. The new structure exhibits an Ge concentration dependent profile along the growth direction. This effect is tentatively attributed to the stress-driven intermixing of Ge/Si during the growth.
SDGs
Type
journal article