Shubnikov-de Hass Oscillation in Graphene
Date Issued
2016
Date
2016
Author(s)
Chien, Wei-Chen
Abstract
Graphene is a well-known two-dimensional material. Recently, researchers pursuit in developing controllable method to tune the properties of graphene in order to make it prior to existing product in semiconductor industry. Substitution of graphene such as N-doped graphene shows interesting properties compared with pristine graphene. The quantum hall effect can be presented for pristine graphene devices in lots of experiments. While N-doped graphene displays a different phenomena under high external magnetic field, the magneto-resistance (MR) appears to have enhanced the Shubnikov-de Hass (SdH) oscillation but decrease the oscillation frequency. The thesis focus on the transport properties and also SdH oscillation for graphene constructed by tight binding model and discuss the physical phenomena while considering disordered potentials or line defects. The transport properties are analyzed by the Landauer-Keldysh formalism by using non-equilibrium Green function (NEGF) technique.
Subjects
Magneto-resistance
Quantum hall effect
Shubnikov-de Hass oscillation
Graphene
Type
thesis
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