Flexible Semiconductor Device Technologies
Journal
2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Date Issued
2021
Author(s)
Abstract
Flexible electronic devices operating in the GHz range is critical for applications like wireless communication and radars. GaN-based transistors have been extensively studied in rigid microwave electronics for high-frequency and high-power applications due to their superior properties of AlGaN/GaN heterostructure. Here, we review our recent research on flexible microwave electronics based on GaN HEMT, including high-performance flexible GaN HEMTs on conventional plastic substrates, biodegradable cellulose nanofibril substrates, and GaN HEMT-based flexible microwave circuits. © 2021 IEEE.
Subjects
amplifier; flexible electronics; GaN HEMT
SDGs
Other Subjects
Aluminum gallium nitride; Biodegradable polymers; Flexible electronics; Gallium nitride; High electron mobility transistors; III-V semiconductors; Microwave circuits; Wide band gap semiconductors; AlGaN/GaN heterostructures; Flexible electronic devices; High frequency HF; High power applications; Microwave electronics; Plastic substrates; Recent researches; Wireless communications; Substrates; Communication; Electronics; Frequency; Performance; Plastics; Research; Review; Substrates
Type
conference paper