A 50 to 70 GHz power amplifier using 90 nm CMOS technology
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
19
Journal Issue
1
Pages
45-47
Date Issued
2009
Author(s)
Abstract
A 50 to 70 GHz wideband power amplifier (PA) is developed in MS/RF 90 nm 1P9M CMOS process. This PA achieves a measured P sat of 13.8 dBm, P 1 dB of 10.3 dBm, power added efficiency (PAE) of 12.6%, and linear power gain of 30 dB at 60 GHz under V DD biased at 1.8 V. When V DD is biased at 3 V, it exhibits P sat of 18 dBm, P 1 dB of 12 dBm, PAE of 15%, and linear gain of 32.4 dB at 60 GHz. The MMIC PA also has a wide 3 dB bandwidth from 50 to 70 GHz, with a chip size of 0.66 times 0.5 mm 2 . To the author's knowledge, this PA demonstrates the highest output power, with the highest gain among the reported CMOS PAs in V-band.
SDGs
Type
journal article