Characterizations of Amorphous IGZO Thin-Film Transistors With Low Subthreshold Swing
Journal
IEEE Electron Device Letters
Journal Volume
32
Journal Issue
9
Pages
1245--1247
Date Issued
2011-09
Author(s)
Liang-Yu Su
Hsin-Ying Lin
Huang-Kai Lin
Sung-Li Wang
Lung-Han Peng
JianJang Huang
Abstract
Subthreshold swing (SS) is a key parameter in evaluating the power consumption and material properties of thin-film transistors (TFTs). In this letter, we report an amorphous indium gallium zinc oxide (a-IGZO) TFT with a high-κ SiO 2 /HfO 2 gate insulator. The device shows a SS of 96 mV/decade and an on-to-off current ratio of 1.5 × 10 10 . The low SS was attributed to the fully depleted channel state, low interface defects, and efficient modulation of the device. With low defect states, the device demonstrates only 2.71% change of operating currents after 1.5 × 10 4 s stress.
SDGs
Type
journal article