Observation of giant ambipolar diffusion coefficient in thick InGaN/GaN multiple-quantum-wells
Resource
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Journal
Lasers and Electro-Optics, 2001. CLEO '01
Pages
-
Date Issued
1-May
Date
1-May
Author(s)
DOI
N/A
Abstract
Summary form only given. We report our studies on the 2D lateral diffusion behaviors in InGaN/GaN MQWs using optical techniques. Similar to previous observation of the giant ambipolar diffusion coefficient in GaAs-based n-i-p-i superlattices, we have observed giant ambipolar diffusion coefficient in large well-width InGaN MQWs due to the spatial charge separation by the large built-in piezoelectric field. With a well width of 62 /spl Aring/, a room-temperature ambipolar diffusion. coefficient of 2700/spl plusmn/500 cm/sup 2//s was measured.
Type
conference paper
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