Improved temperature characteristics of semiconductor lasers due to carrier redistribution among nonidentical multiple quantum wells
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
4986
Pages
237-244
Date Issued
2003
Author(s)
Abstract
Carriers among nonidentical multiple quantum wells (MQ Ws) will redistribute as temperaturevanes.This is due to stronglj temperature-dependent Fermi-Dirac distribution, which favors carriers in high energv states in high temperature.As a result, the temperature characteristic of semiconductor can be improved.
SDGs
Type
conference paper