Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures
Journal
Pacific Rim Conference on Lasers and Electro-Optics, CLEO
Journal Volume
2
Date Issued
2003
Author(s)
Abstract
Optical properties and material microstructures of InGaN/GaN quantum wells structures with various nominal indium contents, quantum well widths, and different thermal annealing conditions were compared to show the effects of indium aggregations and strains.
SDGs
Type
conference paper