Electrical and optical properties of InSe with various interfaces
Journal
Applied Physics Letters
Journal Volume
121
Journal Issue
7
Start Page
A98
ISSN
0003-6951
1077-3118
Date Issued
2022-08-15
Author(s)
Lili Zhou
Yanhui Lv
Yue Zhao
Gang Wu
Peiyao Xiao
Jiung Cho
Miri Choi
Cormac Ó Coileáin
Han-Chun Wu
Abstract
In this work, we investigated how the electrical and photoelectrical properties of InSe based devices depend on the interfaces made with standard materials such as SiO2, BN, and PMMA. The use of a BN layer is found to not only change the carrier type but also weaken the out-of-plane vibration of InSe. Field-effect transistor devices show a p-type behavior for InSe on SiO2, while for InSe on BN, the majority carriers are electrons. Moreover, due to the weakened electron–phonon interaction the electron mobility of InSe on BN is more than two magnitudes greater than its hole mobility on SiO2. A p–n junction diode is also demonstrated with InSe/SiO2 and InSe/BN with a rectification ratio as high as 102 and a photoresponsivity of 52 A/W, which can be enhanced to 103 and 1.6 × 104 A/W with a PMMA coverlayer. Our results may be useful for the design of high-performance van der Waals heterojunction photodetectors.
Subjects
Electric rectifiers
Electron-phonon interactions
Field effect transistors
Heterojunctions
Hole mobility
Indium compounds
Optical properties
Silica
Silicon
Van der Waals forces
SDGs
Publisher
AIP Publishing
Type
journal article