Progress in semiconducting oxide-based thin-film transistors for displays
Journal
Semiconductor Science and Technology
Journal Volume
20
Journal Issue
8
Pages
720-725
Date Issued
2005
Author(s)
Li, Y.J.
Abstract
Recent progress in the development of transparent thin-film transistors for integration with flexible displays is discussed. Specifically, the fabrication and properties of ZnO-based thin-film transistors on glass are described. Top-gate-type thin-film transistors with transparent n-type ZnO as the active channel layer have been fabricated via wet photolithography processing. The ZnO layers were deposited using pulsed laser deposition. A low leakage current of 10−7 A cm−2 was realized with amorphous HfO2 or (Ce, Tb)MgA11O19 as the gate dielectric. N-channel depletion-mode operation was shown for the undoped ZnO thin-film transistors. Phosphorus-doped ZnO and (Zn, Mg)O were also utilized as channel materials in order to realize a reduction in carrier density. The current–voltage measurements demonstrate an enhancement-mode device operation for the thin-film transistors with P-doped (Zn, Mg)O as the active channel layer and HfO2 serving as the gate dielectric.
SDGs
Type
journal article