Development of Thin Film Thermal Conductivity Measurement
Date Issued
2008
Date
2008
Author(s)
Chang, Tien-Yao
Abstract
By using the exact solution of a 2-layer, 2-dimensional steady state heat transport model, methods of measuring thermal conductivity of thin film are developed, while considering heat spreading effects in thin film layer. These methods are used for testing samples of dielectric thin film deposit on silicon substrate, with metal lines served as heater/thermometer deposit on it. Most other measurements for thin film ignore effect of in-plane heat flow in the film area in their theories. This assumption will cause a large error when film thickness gets thicker, especially when it’s larger than micrometer. Base on the 2-dimensional exact solution, we discuss relations between spreading resistance and ratio of heat flux in film area and parameters of the model are made. From this, measurements with larger suitable range of film thickness are developed. Two different measurements will be introduced in this thesis. One is the parallel line method which set another metal line parallel to heater line for thermometer. Thermal conductivity of the film is calculated by temperature difference between the two lines.The error of this method is less than 3.5% in range of film thickness 10nm ~ 1 and thermal conductivity lower than 10 W/mK. Another measurement is the thickness difference method. This method needs two sets of samples which have different film thickness while all other parameters are the same. Thermal conductivity is calculated by the difference of heating line temperature on the two samples. The error of this method is less than 5% in range of film thickness 10 ~ 1000 and thermal conductivity lower than 10 W/mK.
Subjects
thin film
thermal conductivity
measurement
spreading resistance
Type
thesis
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