Direct evidence of nanocluster-induced luminescence in InGaN epifilms
Journal
Applied Physics Letters
Journal Volume
86
Journal Issue
2
Date Issued
2005
Author(s)
Abstract
x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectrometry, and cathodoluminescence measurements have been employed to study the correlation between optical and structural properties in InGaN epitaxial films. In-rich quantum dots were found to be dispersed throughout the film. By the combination of these measurements, we clearly identify that brighter luminescence arises from In-rich regions while dimmer luminescence corresponds to the Ga-rich matrix regions.
SDGs
Type
journal article