The Low Temperature Solution-Processed Silicon Particles Thin Film Transistors
Date Issued
2009
Date
2009
Author(s)
Wu, Che-Kuan
Abstract
The performance of low temperature, solution-based silicon particles thin film transistor with liquid phase deposition (LPD) of silicon dioxide (SiO2) as gate insulator were studied in the thesis. The silicon-particles thin film formed after irradiating the silicon particles by a pulsed KrF excimer laser from the substrate side of the quartz substrate, the average thickness of silicon particles thin film was 200 nm. This thin film adhered to the quartz substrate very well and the best conductivity of the thin film were 1.6×10-1 Ω-1cm-1 , respectively. Liquid phase deposition (LPD) is a special and potential technique for deposition of silicon dioxide. However the uniformity of LPD-SiO2 is not good because of the powder in the H2SiF6 solution. These powders fall on the LPD-SiO2 of substrate, and finally the powders are burid in the LPD-SiO2 film. To solve this precipitation problem of the LPD-SiO2, we discover that the growth face of the substrate can be changed from up to down, then, the powder only fall on the back side of substrate. Finally, the schottky contact TFT which was using silicon-particles film and LPD-SiO2 as gate insulator were fabricated and measure. The field effect mobility of TFTs with NH3 treatment were 0.86 and 0.11 cm2V-1s-1 and the best ON/OFF current ratio in these four samples is about 40.
Subjects
solution
solution process
tft
Type
thesis
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