Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate
Journal
Electronics Letters
Journal Volume
30
Journal Issue
10
Pages
823-825
Date Issued
1994
Author(s)
Abstract
A novel electronic device using a two dimensional electron gas produced by the strain-induced electric field in a [111] growth-axis In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure without modulation doping is reported. Two dimensional electron gas densities greater than 1011 cm-2 were observed both at room temperaure and 77°K. A field effect transistor using this strain-layer structure was fabricated successfully.
SDGs
Type
journal article