Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate
Journal
Electronics Letters
Journal Volume
30
Journal Issue
10
Pages
823-825
Date Issued
1994
Author(s)
SDGs
Type
journal article