RF MEMS Circuit and Inductor
Date Issued
2004
Date
2004
Author(s)
Wang, Tao
DOI
en-US
Abstract
A new technology based on MEMS processes is developed to improve RFICs. On-chip inductor with Q-factor enhancement is realized by micromachining. The substrate under inductors is successfully etched and removed. Qmax of a 3.5 turn inductor increased by 22% after the post processing and the NF is reduced by 0.4dB at 6GHz. Another inductor with thick dielectric is realized and tested. Though the quality factor of this inductor is high, the asymmetry of S11 and S22 is very serious. This mismatch exists because the underpass is too close to silicon substrate.
To integrate MEMS device on RFICs, the substrate etching technology is applied to a dual-band LNA, On condition that the same chip is biased with the same power consumption, noise figure is reduced by 0.23dB at 2.4GHz and 0.36dB at 4.9GHz.
Subjects
射頻電路 電感 微機電
RFIC Inductor MEMS
Type
thesis
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