Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides
Journal
Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Journal Volume
18
Journal Issue
2
Pages
185-191
Date Issued
1995
Author(s)
Abstract
Abstract Nitrided oxides are used as the CCD's gate oxides in this work. The nitridation process is carried out in NH3 or N2O ambient. After irradiation of Co‐60 with a total dose of 106 rads, we find that CCD with N2O nitrided gate oxide is more radiation hard than CCD with fresh gate oxide or NH3 nitrided gate oxide. Detailed fabrication processes, p‐n junction leakage current, radiation effect, and anneal effect are also discussed in this work.
Type
journal article