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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
A high gain, high power K-band frequency doubler in 0.18 μm CMOS process
Details
A high gain, high power K-band frequency doubler in 0.18 μm CMOS process
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
20
Journal Issue
9
Pages
522-524
Date Issued
2010
Author(s)
Chen, J.-H.
Wang, H.
HUEI WANG
DOI
10.1109/LMWC.2010.2057412
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/497484
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-77956403727&doi=10.1109%2fLMWC.2010.2057412&partnerID=40&md5=bb94dd4b3c2b9b5ab46ac532473279d3
Type
journal article