The effect of plasma treatment and anti-reflection structure on the performance of a-Si:H/c-Si Heterojunction Solar Cells
Date Issued
2015
Date
2015
Author(s)
Lu, Chun-Cheng
Abstract
In a-Si:H/c-Si heterojunction solar cells, device performance is strongly dependent on the quality of the heterojunction interface and anti-reflection structure. The first part, we apply a method to treat the heterojunction interface and improve its quality in this thesis. The method we call plasma treatment is to pre-treated the c-Si surface by a low energy mixed plasma which is the growth recipe of a-Si:H layer before the this film is actually deposited by PECVD. The plasma treatment improve both the open circuit voltage(Voc) and fill factor(F.F.) and thereby increase the conversion efficiency of solar cell due to the good passivation of interface and the increase of build-in potential. The second part, anti-reflection structure is introduced to improve the device performance in this thesis. By means of anti-reflection structure, the short circuit current density (Jsc) can be largely enhanced and the efficiency is improved. In this thesis, we adopt two ways to achieve anti-reflection structure. One is to use textured substrate formed by wet chemical etching method. This way can significantly reduce the reflectance of substrate. The other is to improve the quality of ITO. Due to increasing the deposition temperature of indium tin oxide (ITO), the transmittance and conductivity of ITO can be improved.
Subjects
plasma treatment
anti-reflection structure
a-Si:H/c-Si Heterojunction Solar Cells
Type
thesis
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